国家/地区 日本（28） 世界知识产权组织（9） 台湾（5） 美国（5） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 C（28） H（16） B（12）
G（2）
IPC大类 C01（28） H01（16） B82（8）
C23（7） B01（3） B32（3）
C30（3）
IPC小类 C01B（28） H01L（11） B82Y（7）
C23C（7） H01B（5） B01J（3）
B32B（3） C30B（3） H01M（2）
IPC C01B031/02（28）
发明人 HASEGAWA M（8） YAMADA T（7） ISHIHARA M（6）
KAWABATA A（4） HASEGAWA MASATAKA（3） SATO S（3）
SHIMADA N（3） TSUGAWA K（3） AKITA T（2）
HAYASHI K（2） HO K J（2） IIJIMA S（2）
IIJIMA SUMIO（2） ISHIHARA MASATOU（2） JAEHO K（2）
公开年 2014（10） 2013（7） 2012（3） 2015（3） 2010（2）
申请年 2012（9）  2013（8）  2011（4）  2014（2） 
专利权人 DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO（28）

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Manufacturing method of graphene laminated body, involves processing graphene film with fine adhesive sheet and doping solution which does not react chemically, after temporarily fixing graphene film on fine adhesive sheet.

ISHIHARA M

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T

Defect repairing method of graphene film e.g. planar crystalline carbon film, involves irradiating laser by giving carbon source to portion identified as defect portion of film, and restoring local defect of film.

OKIKAWA Y, ISHIHARA M, OMURA H, HASEGAWA M

Porous composite carbon material used as e.g. electronic material, comprises graphene and aminated carbon nanotube containing amino group, where graphene is bonded with surface of aminated carbon nanotube by (pi)-(pi) interaction.

SUMIYA T, SHIMOMURA T, SUZUKI M, ONO M, YOKOYAMA T, ISHIZAKA T, HANAOKA T, MINAKAMI F, SUZUKI T

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Graphene film roll comprises graphene film, resin layer, and base material, where resin layer is obtained using resin with predetermined adhesive peel strength after curing.

YAMADA T, SHIMADA N

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K